Quasiparticle Manipulations in 2D Semiconductors via Hetero-Interfaces and Dielectric Environment

Two-dimensional (2D) semiconductors provide a powerful platform for engineering quasiparticles due to their atomic thickness, strong Coulomb interactions, and extreme sensitivity to the surrounding dielectric environment. In these materials, excitons exhibit large binding energies and pronounced environmental tunability, while their compatibility with heterostructures enables integration with superconductors. Together, these properties make 2D systems ideal for controllable quantum and optoelectronic functionalities.
In this research, we demonstrate deterministic control of quasiparticles in monolayer 2D semiconductors using dielectric and interface engineering. Experimentally, CVD-grown n-type and p-type monolayers transferred onto CMOS-compatible dielectrics reveal how screening, doping, and trapped charges reshape exciton emission, trion dynamics, and radiative efficiency. Theoretically, numerical solutions of the two-dimensional Schrödinger equation with the Rytova–Keldysh interaction provide accurate prediction of excitonic binding energies under varying dielectric conditions. Building on this framework, we propose dielectric nanopillar structures that create lateral confinement potentials capable of supporting localized, quantum-dot-like excitonic states. In parallel, we demonstrate Cooper pair injection into monolayer 2D semiconductors through superconductor–semiconductor junctions, revealing proximity-induced superconducting correlations.
Collectively, these findings demonstrate that dielectric and interface engineering enable deterministic and scalable control of quasiparticles in two-dimensional semiconductors, advancing the development of integrated quantum optoelectronic and hybrid superconducting platforms. These results pave the way for emerging quantum applications, including deterministic single-photon emitters and entangled photon sources based on atomically thin materials.

Ph.D. student Under the supervision of Prof. Alex Hayat and Dr. ilya goykhman.