The award recognizes their paper, “A Simple Route for SrTiO₃ Epitaxy on GaAs,” which introduces a streamlined approach for growing epitaxial oxide layers on gallium arsenide (GaAs), an important semiconductor widely used in optoelectronic devices such as sensors and lasers.
Traditionally, integrating complex oxide materials with GaAs requires a slow, delicate, multi-step process. The team’s new single-step growth method achieves comparable material quality while significantly simplifying fabrication, opening new opportunities for oxide-semiconductor integration and enabling broader adoption of these technologies by the research community.
The research was carried out in collaboration with the National Photonics Center at Soreq, with funding from the Pazi Foundation and support from the Technion Microelectronics Center.
Congratulations to the entire research team on this outstanding achievement!
