Seminar: Graduate Seminar
Atomic-Level Understanding and Spintronic Potential of Magnetic Anisotropy in a Model Complex Oxide
Date:
May,19,2025
Start Time:
14:30 - 15:30
Location:
1061, Meyer Building
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Lecturer:
Brajagopal Das
Research Areas:
| The directional dependence of magnetic properties, known as magnetic anisotropy, is a key feature of many magnetic materials. Magnetic anisotropy underpins a wide range of modern technologies, from magnetic sensors to non-volatile magnetic memory devices. In particular, tilted magnetic anisotropy (TMA) has the potential to transform the future of data storage and high-speed computing. However, realizing desired TMA features is a major challenge. Complex oxides are a class of materials providing a rich platform for exploring such possibilities for next generation magnetic devices, owing to the strong coupling among charge, spin, orbit, and lattice degrees of freedom. Recently, we demonstrated TMA with strong perpendicular magnetization and in-plane broke symmetry in the complex oxide ruthenium-substituted manganite. These features, with their added benefit of Curie temperature near room temperature, make this material a promising candidate for spintronic memory, particularly, spin-orbit-torque (SOT) based magnetic memory. Given the technological relevance, it is of paramount importance to fundamentally understand this observed magnetic anisotropy. Using synchrotron-based, element-specific study, we identify the atomic origins of the observed magnetic anisotropy and uncover a novel atomic mechanism behind this magnetic anisotropy, where magneto-crystalline anisotropy and exchange interaction play prominent and comparable roles. Our findings thus provide fresh insights into the design of materials that support TMA for next-generation spintronic devices.
Ph.D. student Under the supervision of Prof. Lior Kornblum.
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