Seminar: Graduate Seminar
Advanced Characterization of Ferroelectric Devices for Low-Power Low-Latency Non volatile Memory and Neuromorphic Applications
Date:
August,11,2025
Start Time:
14:30 - 15:30
Location:
1061, Meyer Building
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Lecturer:
Mor M. Dahan
Research Areas:
Ferroelectric devices are gaining renewed interest for next-generation memory and logic applications due to their ability to retain information via switchable polarization states. The discovery of ferroelectricity in doped hafnium oxide (HfO₂) enabled scalable, CMOS-compatible devices that combine fast switching, low power, and non-volatility – making them highly attractive for advanced memory and neuromorphic applications. In this seminar, I will present key findings from our research on the static and dynamic electrical behavior of ferroelectric field-effect transistors (FeFETs) and capacitors (FeCAPs). The talk will begin with the first experimental demonstration of sub-nanosecond switching, enabled by high-speed electrical measurements. This will be complemented by a detailed analysis of voltage-time kinetics spanning 11 orders of magnitude in time and by modeling based on nucleation-limited switching. The second part will address a key challenge for FeRAM technologies: achieving fast and non-destructive readout of stored data. While conventional FeRAM readout schemes are destructive, we introduce a novel non-destructive technique that utilizes fast transient current sensing in FeCAPs to enable high-speed, energy-efficient, and high-endurance data access. Additional highlights will include studies on charge trapping mechanisms, reliability measurements, temperature-dependent switching, and sub ns dynamics in RF-compatible ferroelectric capacitors. These investigations contribute to a deeper understanding of ferroelectric switching dynamics and behavior in these emerging devices. |
Mor is a PhD candidate under the supervision of Prof. Eilam Yalon.
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