Seminar: Graduate Seminar
Two Dimensional Electrochemical Transistors as Non-volatile Memories for Neuromorphic Applications
Date:
November,12,2025
Start Time:
16:30 - 17:30
Location:
1061, Meyer Building
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Lecturer:
Or Levit
Research Areas:
| Electrochemical RAM (ECRAM) devices are promising candidates for analog synapses in hardware-based neuromorphic systems, offering low-energy and accurate training of multi-level memory states. However, their practical adoption is currently limited by significant challenges in retention, endurance, and programming speed. In this seminar, I will first explore the fundamental ionic-electronic dynamics that govern these limitations, focusing on the mechanisms that constrain high-speed programming. Following this, I will introduce a novel ECRAM structure designed to overcome these challenges, featuring a bilayer MoS2 channel and an alumina (Al2O3) kinetic barrier. This architecture is specifically designed to suppress key mechanisms for volatility while allowing high speed. I will present detailed characterization of this new transistor, demonstrating an excellent combination of synaptic properties. These include high-precision analog switching (>100 states) and strong retention (>10ยณ seconds), while maintaining low power consumption. Finally, the potential of this device as a biologically-realistic synapse will be shown through the implementation of spike-timing-dependent plasticity (STDP) learning rules, providing a clear pathway toward practical neuromorphic systems. Ph.D. student Under the supervision of Prof. Eilam Yalon.
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