Conduction Mechanisms in SrTiO3/GaAs Heterojunctions

Integration of functional perovskite oxides with conventional semiconductors offers a promising route for combining electronic properties of oxides with established semiconductor technologies. Parameters such as dielectric response, mobility and effective mass can differ significantly in thin epitaxial layers due to interface states and electrostatic boundary conditions. As a result, direct experimental characterization alone may not fully reveal the mechanisms governing the device behavior. Device-level simulations therefore provide a valuable complementary approach, enabling exploration of physical parameters and mechanisms, allowing prediction of device performance prior to fabrication.
In this work, we employ TCAD Sentaurus simulations to investigate charge transport in Pt/SrTiO3/GaAs heterojunctions. The simulation results are compared with experimentally measured current-voltage characteristics reported for epitaxial Pt/SrTiO3/GaAs structure. By reproducing the experimentally determined band alignment and performing parameter sweeps including dielectric response, interface traps, effective mass and mobility we identify the dominant conduction mechanisms governing transport in the heterojunction. The results demonstrate how device-level simulations can provide insights and enable predictive modeling of device performance before growth and fabrication.

M.Sc. student under the supervision of Prof. Lior Kornblum.